isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 high density mounting high voltage darlington optically coupled isolators description the IS452 is an optically coupled isolator consisting of an infrared light emitting diode and a high voltage npn silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a space efficient dual in line plastic package. features l marked as fph1. l current transfer ratio min. 1000% l high collector-emitter voltage, vceo=300v l isolation voltage (3.75kv rms ,5.3kv pk ) l all electrical parameters 100% tested l drop in replacement for sharp pc452 applications l computer terminals l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com IS452 db92862l-aas/a3 22/4/02 dimensions in mm
parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 10ma reverse voltage (v r ) 5 v i r = 10 m a reverse current (i r ) 10 m a v r = 4v output collector-emitter breakdown (bv ceo ) 300 v i c = 0.1ma emitter-collector breakdown (bv eco ) 0.1 v i e = 10ua collector-emitter dark current (i ceo ) 200 na v ce = 200v coupled current transfer ratio (ctr) 1000 % 1ma i f , 2v v ce collector-emitter saturation voltagev ce (sat) 1.2 v 20ma i f , 100ma i c input to output isolation voltage v iso 3750 v rms see note 1 5300 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output rise time tr 4 18 m s v ce = 2v , output fall time tf 3 18 m s i c = 2ma, r l = 100 w electrical characteristics ( t a = 25c unless otherwise noted ) absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 300v emitter-collector voltage bv eco 0.1v power dissipation 150mw power dissipation total power dissipation 170mw (derate linearly 2.26mw/ c above 25c) note 1 measured with input leads shorted together and output leads shorted together. db92862l-aas/a3 22/4/02
12 / 07 / 01 appendix to mini flat pack fph - aas/a1 taping dimensions description symbol dimensions in mm ( inches ) tape wide w 12 0.3 ( .47 ) pitch of sprocket holes p 0 4 0.1 ( .15 ) distance of compartment f p 2 5.5 0.1 ( .217 ) 2 0.1 ( .079 ) distance of compartment to compar tment p 1 8 0.1 ( .315 )
12 / 07 / 01 appendix to mini flat pack fph - aas/a1 characteristic curves fig.1 forward current vs. fig.2 collector power dissipation vs. ambient temperature fig.4 forward current vs. forward 0 collector-emitter voltage fig.6 collector current vs. current fig.5 current transfer ratio vs. forward fig.3 collector-emitter saturation voltage vs. forward current collector power dissipation pc (mw) current transfer ratio ctr (%) collector current ic (ma) forward current (ma) collector-emitter voltage v (v) ambient temperature ta ( c) ambient temperature ta ( c) 60 0 50 100 150 200 0 0 0.1 0 10 0 0 5 ambient temperature o o voltage 10ma 1.5ma 1ma v ce =2v 1000 2000 3000 5000 4 3 2 1 50 40 30 20 10 ic=5ma 10ma 30ma 50ma 70ma 2 4 5 3 1 4000 3ma i f =0.5ma 100 1 80 60 40 20 1.5ma ce 7000 6000 1 2 3 4 5 2ma 2.5ma 0.5 1.5 2.5 4.5 3.5 100ma p c (max.) 5ma forward current (ma) 0.5 1 100 10 1.9 1.3 forward voltage (v) 0.9 0.7 1.1 1.5 1.7 60 c 100 c 80 c o o o o 40 c o 20 c forward current i f (ma) forward current i f (ma) collector-emitter saturation voltage v ce (sat) (v) 0 50 25 75 100 125 -55 -55 125 25 0 50 75 100
12 / 07 / 01 appendix to mini flat pack fph - aas/a1 characteristic curves fig.7 relative current transfer ratio vs. ambient temperature fig.8 collector-emitter saturation voltage fig.9 collector dark current vs. temperature fig.10 response time vs. load ce vs. ambient temperature 0 10 1 ambient temperature ta ( c) relative current transfer ratio (%) collector-emitter saturation voltage v (sat) (v) ambient temperature ta ( c) 100 1.0 1 0.1 1000 o o resistance voltage gain av (db) -25 0 frequency f (khz) 500 fig.11 frequency response 80 60 40 20 0.8 0.6 0.4 0.2 -5 -10 -15 -20 100 10 1 0.1 v ce =2v i c =20ma ta=25 c r l =1k 100 10 2 5 10 20 50 100 200 500 response time ( s) load resistance r l (k ) v ce =2v i c =20ma ta=25 c test circuit for response time test circuit for frequency response input output input output vcc td tr tf ts 90% 10% output vcc ambient temperature ta ( c) 100 80 60 40 20 o 1 1000 100 collector dark current i ceo (na) t r t f t d t s 20 1.0 100 40 60 80 0.8 0.6 0.4 0.2 1.2 r d r l r l r d i f =1ma v ce =2v 10 v ce =200v i f =20ma i c =100ma o o 1.2
12 / 07 / 01 appendix to mini flat pack fph - aas/a1 temperature profile of soldering reflow (1) one time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 1 minute 2 minutes 1.5 minutes 1 minute 25 c 180 c 200 c 230 c (2) when using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. keep the temperature on the package of the device within the condition of above (1).
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